 English |
|
|
|
|
|
|
|
| ACE1500B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
| |||
|
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell
density and DMOS trench technology .This device particularly suits low voltage applications, especially
for battery powered circuits, the tiny and thin outline saves PCB consumption.
Features
ï· VDS(V)=-20V
ï· ID=-1.6A (VGS=-4.5V)
ï· RDS(ON)ï¼155mΩ (VGS=-4.5V)
ï· RDS(ON)ï¼168mΩ (VGS=-2.5V)
ï· RDS(ON)ï¼220mΩ (VGS=-1.8V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-20 V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Continuous) TA=25 OC
ID
-1.6
A
Drain Current (Pulse)
IDM
-5
Power Dissipation TA=25 OC
PD
350 mW
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-323
VER 1.2 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese