5SHX10H6010 Datasheet, PDF (9/13 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor

5SHX 10H6010
E_rr [J]
3.0
2.5
T_j = 115°C
di_F/dt = 290 A/µs
V_D = 3300 V
2.0
1.5
TBD
1.0
0.5
0.0
0 100 200 300 400 500 600 700 800 900 1000
I_FQ [A]
Fig. 13 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs decay rate of on-state current
I_rr [A]
500
450
T_j = 115°C
di_F/dt = 290 A/µs
V_D = 3300 V
400
TBD
350
300
250
Fig. 15 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
200
0 100 200 300 400 500 600 700 800 900 1000
I_FQ [A]
Fig. 16 Upper scatter range of diode reverse recovery
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1226-05 Aug 07
page 9 of 13