5SND0800M1701 Datasheet, PDF (8/9 Pages) The ABB Group – IGBT Module

5SND 0800M170100
400
Erec [mJ] = -0.105 x 10^-3 x IF2 + 352 x 10^-3 x IF + 49
Irr
800
300
200
Erec
600
Qrr
400
100
0
0
VCC = 900 V
V_GE = ±15 V
200
RG = 1.2 ohm
Tvj = 125 °C
L_σ = 80 nH
0
400
800
1200 1600
IF [A]
Fig. 12 Typical reverse recovery characteristics
vs forward current
400
300
Q_rr
800
Irr
600
200
400
Erec
100
0
0
1
VCC = 900 V ²⁰⁰
IF = 800 A
Tvj = 125 °C
L_σ = 80 nH
0
2
3
4
5
di/dt [kA/µs]
Fig. 13 Typical reverse recovery characteristics
vs di/dt
1600
1400
1200
1000
25°C
125°C
800
600
400
200
0
0
0.5
1
1.5
2
2.5
VF [V]
1600
1200
VCC ≤ 1200 V
di/dt ≤ 5 kA/µs
Tvj = 125 °C
800
400
0
0
500
1000
1500
2000
VR [V]
Fig. 14 Typical diode forward characteristics,
chip level
Fig. 15 Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1589-00 Oct 06
page 8 of 9