5STP27H2801 Datasheet, PDF (3/6 Pages) The ABB Group – Phase Control Thyristor

Triggering
Maximum rated values ¹⁾
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Characteristic values
Parameter
Gate-trigger voltage
Gate-trigger current
Symbol Conditions
V_FGM
I_FGM
V_RGM
P_G(AV)
Symbol Conditions
V_GT
T_vj = -40 °C
T_vj = 25 °C
T_vj = 125 °C
I_GT
T_vj = -40 °C
T_vj = 25 °C
T_vj = 125 °C
5STP 27H2801
min typ
min typ
0.25
10
max
12
10
10
5
Unit
V
A
V
W
max
4
3
2
500
250
150
Unit
V
mA
Thermal
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Operating junction
T_vj
temperature range
Storage temperature range T_stg
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction R_th(j-c)
to case
Double-side cooled
F_m = 45...55 kN
R_th(j-c)A
R_th(j-c)C
Thermal resistance case to R_th(c-h)
heatsink
Anode-side cooled
F_m = 45...55 kN
Cathode-side cooled
F_m = 45...55 kN
Double-side cooled
F_m = 45...55 kN
R_th(c-h) Single-side cooled
F_m = 45...55 kN
Analytical function for transient thermal
impedance:
min typ max Unit
-40
125
°C
-40
125
°C
min typ max Unit
10 K/kW
16 K/kW
26.5 K/kW
3
K/kW
6
K/kW
n
∑ Zth(j-c)(t) = R th i (1- e-t/τi )
i=1
i
1
2
3
4
R_{th i}(K/kW) 6.730
1.440
0.650 1.160
τ_i(s)
0.4871 0.1468 0.0677 0.0079
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1068-01 March 05
page 3 of 6