5SNA1600N1701 Datasheet, PDF (3/9 Pages) The ABB Group – IGBT Module

5SNA 1600N170100
Diode characteristic values ⁵⁾
Parameter
Symbol Conditions
Forward voltage ⁶⁾
V_F
I_F = 1600 A
Reverse recovery current
I_rr
Recovered charge
Q_rr
Reverse recovery time
t_rr
Reverse recovery energy
E_rec
5) _{Characteristic values according to IEC 60747 – 2}
6) _{Forward voltage is given at chip level}
V_CC = 900 V,
I_F = 1600 A,
V_GE = ±15 V,
R_G = 0.82 Ω
L_σ = 50 nH
inductive load
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
min typ max Unit
1.65 2.0
V
1.7 2.0
1090
A
1400
390
µC
690
620
ns
830
280
mJ
480
Thermal properties ⁷⁾
Parameter
Symbol Conditions
IGBT thermal resistance
junction to case
R_th(j-c)IGBT
Diode thermal resistance
junction to case
R_th(j-c)DIODE
IGBT thermal resistance ²⁾
case to heatsink
R_th(c-s)IGBT IGBT per switch, λ grease = 1W/m ^x K
Diode thermal resistance ⁷⁾
case to heatsink
R_th(c-s)DIODE Diode per switch, λ grease = 1W/m ^x K
2) _{For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01}
min typ max Unit
0.011 K/W
0.018 K/W
0.012
K/W
0.024
K/W
Mechanical properties ⁷⁾
Parameter
Dimensions
Symbol Conditions
L ^x W ^x H Typical , see outline drawing
min typ max Unit
130 ^x 140 ^x 38 mm
Clearance distance in air
d_a
according to IEC 60664-1 ^{Term. to base: 19}
and EN 50124-1
Term. to term: 19
mm
Surface creepage distance
d_s
according to IEC 60664-1 ^{Term. to base: 32}
and EN 50124-1
Term. to term: 32
mm
Mass
m
920
g
7) _{Thermal and mechanical properties according to IEC 60747 – 15}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 3 of 9