5SMY12K1201 Datasheet, PDF (2/5 Pages) The ABB Group – IGBT-Die

5SMY 12K1201
IGBT characteristic values ²⁾
Parameter
Symbol Conditions
Collector (-emitter)
breakdown voltage
V_(BR)CES V_GE = 0 V, I_C = 1 mA, T_vj = 25 °C
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
V_{CE sat}
I_CES
I_GES
V_GE(TO)
Q_ge
C_ies
C_oes
C_res
R_Gint
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
I_SC
I_C = 100 A, V_GE = 15 V
T_vj = 25 °C
T_vj = 125 °C
V_CE = 1200 V, V_GE = 0 V
T_vj = 25 °C
T_vj = 125 °C
V_CE = 0 V, V_GE = ±20 V, T_vj = 125 °C
I_C = 4 mA, V_CE = V_GE, T_vj = 25 °C
I_C = 100 A, V_CE = 600 V, V_GE = -15 ..15 V
V_CE = 25 V, V_GE = 0 V, f = 1 MHz,
T_vj = 25 °C
V_CC = 600 V, I_C = 100 A,
R_G = 10 Ω, V_GE = ±15 V,
T_vj = 25 °C
T_vj = 125 °C
L_σ = 60 nH,
inductive load
T_vj = 25 °C
T_vj = 125 °C
V_CC = 600 V, I_C = 100 A,
R_G = 10 Ω, V_GE = ±15 V,
L_σ = 60 nH,
inductive load
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
V_CC = 600 V, I_C = 100 A,
V_GE = ±15 V, R_G = 10 Ω,
L_σ = 60 nH,
inductive load,
FWD: 5SLX 12H1200
T_vj = 25 °C
T_vj = 125 °C
V_CC = 600 V, I_C = 100 A,
V_GE = ±15 V, R_G = 10 Ω,
T_vj = 25 °C
L_σ = 60 nH,
inductive load
T_vj = 125 °C
t_psc ≤ 10 μs, V_GE = 15 V, T_vj = 125 °C,
V_CC = 900 V, V_CEM ≤ 1200 V
2) _{Characteristic values according to IEC 60747 - 9}
min typ max
1200
1.8
2.0
100
400
-200
200
5 6.2 7
1050
7.43
0.52
0.34
2
125
135
60
60
420
490
60
75
8.6
12.4
6.8
10.8
470
Unit
V
V
V
µA
µA
nA
V
nC
nF
Ω
ns
ns
ns
ns
mJ
mJ
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1635-01 Sep 06
page 2 of 5