5SDF11F2501 Datasheet, PDF (2/6 Pages) The ABB Group – Fast Recovery Diode

On-state (see Fig. 2, 3)
I_FAVM Max. average on-state current
I_FRMS Max. RMS on-state current
I_FSM
Max. peak non-repetitive
surge current
òI²dt
Max. surge current integral
V_F
Forward voltage drop
V_F0
Threshold voltage
r_F
Slope resistance
5SDF 11F2501
950 A
1500 A
Half sine wave, T_c = 85°C
21 kA tp =
10 ms Before surge:
65 kA
2.2⋅10⁶ A²s
2.1⋅10⁶ A²s
≤
1.6 V
1.2 V
0.38 mΩ
tp =
1 ms T_c = T_j = 125°C
tp =
10 ms _{After surge:}
tp =
1 ms V_R ≈ 0 V
I_F = 1000 A
Approximation for T_j = 125°C
I_F = 400…4000 A
Turn-on (see Fig. 4, 5)
V_fr
Peak forward recovery voltage
≤
16 V di/dt = 500 A/µs, T_j = 125°C
Turn-off (see Fig. 6 to 11)
I_rr
Reverse recovery current
Q_rr
Reverse recovery charge
E_rr
Turn-off energy
≤ 550 A
≤ 1200 µC
≤ 0.45 J
di/dt = 300 A/µs, I_F = 700 A,
T_j = 125°C,
V_RM = 2600 V,
C_S = 2µF (GTO snubber circuit)
Thermal (see Fig. 1)
T_j
Operating junction temperature range
T_stg
Storage temperature range
R_thJC Thermal resistance junction to case
R_thCH Thermal resistance case to heatsink
-40...125°C
-40...125°C
≤ 40 K/kW
≤ 40 K/kW
≤ 20 K/kW
≤ 10 K/kW
≤ 5 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F_m =
20… 24 kN
Analytical function for transient thermal impedance.
n
Ã¥ ^{Z thJC (t) =}
R i(1 - e ^{- t /τ i} )
i=1
i
1
2
3
R _i(K/kW)
11.83
4.26
1.63
τ_i(s)
0.432 0.071
0.01
F_m = 20… 24 kN Double side cooled
4
2.28
0.0054
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 2 of 6