5STP52U5200 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DRM
V_DSM
I_T(AV)M
I_T(RMS)
I_TSM
V_(T0)
r_T
= 4400
= 5200
= 4120
= 6470
= 85.2×10³
= 1.04
= 0.115
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 52U5200
Doc. No. 5SYA1042-02 Dec. 03
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values ¹⁾
Symbol Conditions
V_DSM, V_RSM f = 5 Hz, t_p = 10 ms
V_DRM, V_RRM f = 50 Hz, t_p = 10 ms
V_RSM
t_p = 5 ms, single pulse
dV/dt_crit
Exp. to 0.67 x V_DRM, T_vj = 110°C
Characteristic values
Parameter
Symbol
Forward leakage current
I_DSM
Reverse leakage current
I_RSM
5STP 52U5200
5200 V
4400 V
5700 V
5STP 52U5000
5000 V
4200 V
5500 V
2000 V/µs
5STP 52U4600
4600 V
4000 V
5100 V
Conditions
V_DSM, T_vj = 110°C
V_RSM, T_vj = 110°C
min typ
max
600
600
Unit
mA
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
F_M
a
Device unclamped
120 135
Acceleration
a
Device clamped
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
Housing thickness
H
F_M = 135 kN, T_a = 25 °C
34.4
Surface creepage distance
D_S
56
Air strike distance
D_a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
160
50
100
max
3.6
35.4
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.