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| 5STP50Q1800 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor | |||
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VDRM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
= 1800
= 6100
= 9600
= 94Ã103
= 0.9
= 0.05
V
A
A
A
V
mâ¦
Phase Control Thyristor
5STP 50Q1800
Doc. No. 5SYA1070-01 Okt. 03
⢠Patented free-floating silicon technology
⢠Low on-state and switching losses
⢠Designed for traction, energy and industrial applications
⢠Optimum power handling capability
⢠Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
VDRM, VRRM f = 50 Hz, tp = 10 ms
VRSM
tp = 5 ms, single pulse
dV/dtcrit
Exp. to 0.67 x VDRM, Tvj = 125°C
Characteristic values
Parameter
Symbol
Forward leakage current
IDRM
Reverse leakage current
IRRM
5STP 50Q1800
1800 V
2000 V
--
--
--
1000 V/µs
Conditions
VDRM, Tvj = 125°C
VRRM, Tvj = 125°C
min typ
--
--
--
max
300
300
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
FM
a
Device unclamped
81
90
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
FM = 90 kN, Ta = 25 °C
25.5
Surface creepage distance
DS
36
Air strike distance
Da
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
108
50
100
Unit
kN
m/s2
m/s2
max
2.1
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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