5STP45Q2800 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DSM = 2800 V
I_TAVM = 5490 A
I_TRMS = 8625 A
I_TSM = 75000 A
V_T0 = 0.86 V
r_T
= 0.070 mΩ
Phase Control Thyristor
5STP 45Q2800
Doc. No. 5SYA1050-01 Sep.00
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
Blocking
Part Number
V_DRM V_RRM
V_RSM1
I_DRM
I_RRM
dV/dt_crit
5STP 45Q2800
2800 V
3000 V
5STP 45Q2600
2600 V
2800 V
≤ 400 mA
≤ 400 mA
1000 V/µs
5STP 45Q2200 Conditions
2200 V
f = 50 Hz, t_p = 10ms
2400 V
t_p = 5 ms, single pulse
V_DRM
V_RRM T_j = 125°C
@ Exp. to 0.67xV_DRM
Mechanical data
F_M Mounting force
nom.
min.
max.
a _Acceleration
Device unclamped
Device clamped
m Weight
D_S Surface creepage distance
D_a Air strike distance
90 kN
81 kN
108 kN
50 m/s²
100 m/s²
2.1 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.