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5STP42U6500 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor
VDRM
VDSM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
= 5600
= 6500
= 3460
= 5440
= 71.4×103
= 1.24
= 0.162
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 42U6500
Doc. No. 5SYA1043-02 Oct. 04
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 42U6500 5STP 42U6200 5STP 42U5800
VDSM, VRSM f = 5 Hz, tp = 10 ms
6500 V
6200 V
5800 V
VDRM, VRRM f = 50 Hz, tp = 10 ms
5600 V
5300 V
4900 V
VRSM
tp = 5 ms, single pulse
7000 V
6700 V
6300 V
dV/dtcrit
Exp. to 3750 V, Tvj = 110°C
Characteristic values
Parameter
Symbol Conditions
2000 V/µs
min typ max Unit
Forward leakage current
IDSM
VDSM, Tvj = 110°C
700 mA
Reverse leakage current
IRSM
VRSM, Tvj = 110°C
700 mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Mounting force
FM
120 135
Acceleration
a
Device unclamped
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
FM = 135 kN, Ta = 25 °C
34.8
Surface creepage distance
DS
56
Air strike distance
Da
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
160
50
100
max
3.6
35.5
Unit
kN
m/s2
m/s2
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.