5STP30H1801 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DRM
I_T(AV)M
I_T(RMS)
I_TSM
V_(T0)
r_T
= 1800
= 3108
= 4882
= 47×10³
= 0.984
= 0.081
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 30H1801
Doc. No. 5SYA1066-01 March 05
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Maximum rated values ¹⁾
Symbol Conditions
5STP 30H1801 5STP 30H1601 5STP 30H1401
V_DRM, V_RRM f = 50 Hz, t_p = 10 ms
1800 V
1600 V
1400 V
dV/dt_crit
Exp. to 1210 V, T_vj = 125°C
Characteristic values
Parameter
Symbol Conditions
1000 V/µs
min typ max Unit
Forward leakage current
I_DRM
V_DRM, T_vj = 125°C
200 mA
Reverse leakage current
I_RRM
V_RRM, T_vj = 125°C
200 mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Mounting force
F_M
45
50
Acceleration
a
Device unclamped
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Surface creepage distance
D_S
36
Air strike distance
D_a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
55
50
100
Unit
kN
m/s²
m/s²
max
0.93
Unit
kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.