5STP26N6500 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DSM = 6500 V
I_TAVM = 2810 A
I_TRMS = 4410 A
I_TSM = 45000 A
V_T0
=
1.12 V
r_T
= 0.29 mΩ
Phase Control Thyristor
5STP 26N6500
Doc. No. 5SYA1001-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values ¹⁾
Symbol Conditions
5STP 26N6500 5STP 26N6200
V_DSM, V_RSM f = 5 Hz, t_p = 10ms
6500 V
6200 V
V_DRM, V_RRM f = 50 Hz, t_p = 10ms
5600 V
5300 V
V_RSM1
t_p = 5ms, single pulse
7000 V
6700 V
dV/dt_crit
Exp. to 0.67 x V_DRM, T_j = 125°C
Characteristic values
Parameter
Symbol Conditions
2000 V/µs
min typ
Forwarde leakage current
I_DSM
V_DSM, T_j = 125°C
Reverse leakage current
I_RSM
V_RSM, T_j = 125°C
V_DRM/ V_RRM are equal to V_DSM/ V_RSM values up to T_j = 110°C
5STP 26N5800
5800 V
4900 V
6300 V
max
600
600
Unit
mA
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
F_M
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
D_S
D_a
Conditions
min
81
typ
90
max
108
50
100
Unit
kN
m/s²
m/s²
min
56
22
typ
2.9
max
Unit
kg
mm
mm
1) _{Maximum Ratings are those values beyond which damage to the device may occur}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.