5STP18F1800 Datasheet, PDF (1/5 Pages) The ABB Group – Phase Control Thyristor

V_DSM = 1800 V
I_TAVM = 1660 A
I_TRMS = 2610 A
I_TSM = 21000 A
V_T0
=
0.83 V
r_T
= 0.230 mΩ
Phase Control Thyristor
5STP 18F1800
Doc. No. 5SYA1028-04 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Part Number
V_DRM
V_RRM
V_RSM1
I_DRM
I_RRM
dV/dt_crit
5STP 18F1800 5STP 18F1600 5STP 18F1200 Conditions
1800 V
1600 V
1200 V f = 50 Hz, t_p = 10ms
2000 V
1800 V
1400 V t_p = 5ms, single pulse
≤ 200 mA
≤ 200 mA
V_DRM
V_RRM
T_j = 125°C
1000 V/µs
Exp. to 0.67 x V_DRM, T_j = 125°C
Mechanical data
F_M Mounting force
nom.
min.
max.
a _Acceleration
Device unclamped
Device clamped
m Weight
D_S Surface creepage distance
D_a Air strike distance
22 kN
14 kN
24 kN
50 m/s²
100 m/s²
0.6 kg
25 mm
14 mm
ABB Semiconductors AG reserves the right to change specifications without notice.