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| 5STP12N8500 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor | |||
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VDRM
VDSM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
= 8000
= 8500
= 1200
= 1880
= 35Ã103
= 1.25
= 0.48
V
V
A
A
A
V
mâ¦
Phase Control Thyristor
5STP 12N8500
Doc. No. 5SYA1044-02 Nov. 04
⢠Patented free-floating silicon technology
⢠Low on-state and switching losses
⢠Designed for traction, energy and industrial applications
⢠Optimum power handling capability
⢠Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 12N8500 5STP 12N8200 5STP 12N7800
VDSM, VRSM f = 5 Hz, tp = 10 ms
8500 V
8200 V
7800 V
VDRM, VRRM f = 50 Hz, tp = 10 ms
8000 V
7700 V
7300 V
VRSM
tp = 5 ms, single pulse
9000 V
8600 V
8200 V
dV/dtcrit
Exp. to 5360 V, Tvj = 90°C
Characteristic values
Parameter
Symbol Conditions
2000 V/µs
min typ max Unit
Forward leakage current
IDSM
VDSM, Tvj = 90°C
1000 mA
Reverse leakage current
IRSM
VRSM, Tvj = 90°C
400 mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Mounting force
FM
81
90
Acceleration
a
Device unclamped
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
FM = 90 kN, Ta = 25 °C
35.3
Surface creepage distance
DS
56
Air strike distance
Da
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
108
50
100
Unit
kN
m/s2
m/s2
max
2.9
36
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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