5STP12F4200 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DSM = 4200 V
I_TAVM = 1150 A
I_TRMS = 1800 A
I_TSM = 15000 A
V_T0
=
0.95 V
r_T
= 0.575 mΩ
Phase Control Thyristor
5STP 12F4200
Doc. No. 5SYA1021-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Maximum rated values ¹⁾
Symbol Conditions
V_DRM, V_RRM f = 50 Hz, t_p = 10 ms
V_RSM
t_p = 5 ms, single pulse
dV/dt_crit
Exp. to 0.67 x V_DRM, T_vj = 125°C
Characteristic values
Parameter
Symbol
Forward leakage current
I_DRM
Reverse leakage current
I_RRM
5STP 12F4200
4200 V
4600 V
5STP 12F4000
4000 V
4400 V
1000 V/µs
Conditions
V_DRM, T_vj = 125°C
V_RRM, T_vj = 125°C
min typ
5STP 12F3600
3600 V
4000 V
max
200
200
Unit
mA
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
F_M
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
D_S
D_a
Conditions
min
14
typ
22
max
24
50
100
Unit
kN
m/s²
m/s²
min
25
14
typ
0.6
max
Unit
kg
mm
mm
1) _{Maximum ratings are those values beyond which damage to the device may occur}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.