5STP04D5200 Datasheet, PDF (1/6 Pages) The ABB Group – Phase Control Thyristor

V_DSM =
I_TAVM =
I_TRMS =
I_TSM =
V_T0
=
r_T
=
5200 V
440 A
690 A
5000 A
1.2 V
1.6 mΩ
Phase Control Thyristor
5STP 04D5200
Doc. No. 5SYA1026-04 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values ¹⁾
Symbol Conditions
5STP 04D5200 5STP 04D5000
V_DSM, V_RSM f = 5 Hz, t_p = 10ms, Tj = 125°C
5200 V
5000 V
V_DRM, V_RRM f = 50 Hz, t_p = 10ms, Tj = 125°C
4400 V
4200 V
V_RSM1
t_p = 5ms, single pulse, Tj = 125°C
5700 V
5500 V
dV/dt_crit
Exp. to 0.67 x V_DRM, T_j = 125°C
Characteristic values
Parameter
Symbol Conditions
1000 V/µs
min typ
Forwarde leakage current
I_DSM
V_DSM, T_j = 125°C
Reverse leakage current
I_RSM
V_RSM, T_j = 125°C
V_DRM/ V_RRM are equal to V_DSM/ V_RSM values up to T_j = 110°C
5STP 04D4600
4600 V
4000 V
5100 V
max
100
100
Unit
mA
mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
F_M
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
D_S
D_a
Conditions
min
8
typ
10
max
12
50
100
Unit
kN
m/s²
m/s²
min
25
14
typ
0.3
max
Unit
kg
mm
mm
1) _{Maximum Ratings are those values beyond which damage to the device may occur}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.