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5STP03X6500 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Phase Control Thyristor
VDRM
VDSM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
= 5600
= 6500
= 350
= 550
= 4.5×103
= 1.2
= 2.3
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Oct. 04
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 03X6500 5STP 03X6200 5STP 03X5800
VDSM, VRSM f = 5 Hz, tp = 10 ms
6500 V
6200 V
5800 V
VDRM, VRRM f = 50 Hz, tp = 10 ms
5600 V
5300 V
4900 V
VRSM
tp = 5 ms, single pulse
7000 V
6700 V
6300 V
dV/dtcrit
Exp. to 3750 V, Tvj = 125°C
Characteristic values
Parameter
Symbol Conditions
1000 V/µs
min typ max Unit
Forward leakage current
IDSM
VDSM, Tvj = 125°C
150 mA
Reverse leakage current
IRSM
VRSM, Tvj = 125°C
150 mA
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Mounting force
FM
8
10
Acceleration
a
Device unclamped
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
FM = 10 kN, Ta = 25 °C
34.8
Surface creepage distance
DS
38
Air strike distance
Da
21
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
12
50
100
Unit
kN
m/s2
m/s2
max
0.4
35.4
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.