5STB25U5200 Datasheet, PDF (1/6 Pages) The ABB Group – Bi-Directional Control ThyristorBi-Directional Control Thyristor

V_SM =
I_T(AV)M =
I_T(RMS) =
I_TSM =
V_T0 =
r_T
=
5200 V
1980 A
3100 A
42×10 A
1.06 V
0.219 mΩ
Bi-Directional Control Thyristor
5STB 25U5200
Preliminary
Doc. No. 5SYA1038-02 Jul. 03
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values ¹⁾
Symbol Conditions
V_SM
f = 5 Hz, t_p = 10 ms
V_RM
f = 50 Hz, t_p = 10 ms
dV/dt_crit
Exp. to 0.67 x V_RM, T_vj = 110°C
Characteristic values
Parameter
Symbol Conditions
Max. leakage current
I_RM
V_RM, T_vj = 110°C
V_RM is equal to the V_SM value up to T_j = 95 °C
5STB 25U5200
5200 V
4400 V
5STB 25U5000
5000 V
4200 V
2000 V/µs
5STB 25U4600
4600 V
4000 V
min typ
max Unit
400 mA
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
F_M
a
Device unclamped
120 135
Acceleration
Characteristic values
Parameter
a
Device clamped
Symbol Conditions
min typ
Weight
m
Surface creepage distance D_S
53
Air strike distance
D_a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
160
50
100
max
3.6
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.