5STB24Q2800 Datasheet, PDF (1/5 Pages) The ABB Group – Bi-Directional Control Thyristor

V_SM = 2800 V _{Bi-Directional Control Thyristor}
I_TAVM = 2630 A
I_TRMS = 4130 A
I_TSM = 43000 A
5STB 24Q2800
V_T0 = 0.85 V
r_T
= 0.160 mΩ
Doc. No. 5SYA1053-01 Sep. 01
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 24Q2800 5STB 24Q2600 5STB 24Q2200 Conditions
V_SM
3000 V
V_RM
2800 V
I_SM
I_RM
dV/dt_crit
VRM is equal to VSM up to Tj = 110°C
2800 V
2600 V
≤ 400 mA
≤ 400 mA
1000 V/µs
2400 V
f = 5 Hz, t_p = 10ms
2200 V
f = 50 Hz,t_p = 10ms
V_SM
V_RM
T_j = 125°C
@ Exp. to 0.67xV_SM
Mechanical data
F_M Mounting force
nom.
min.
a _Acceleration
Device unclamped
Device clamped
max.
m Weight
D_S Surface creepage distance
D_a Air strike distance
90 kN
81 kN
108 kN
50 m/s²
100 m/s²
2.1 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.