5STB18U6500 Datasheet, PDF (1/5 Pages) The ABB Group – Bi-Directional Control Thyristor

V_SM = 6500 V
I_TAVM = 1580 A
I_TRMS = 2480 A
I_TSM = 29700 A
V_T0
=
1.2 V
r_T
= 0.458 mΩ
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-02 Apr. 02
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking Maximum rated values
Symbol Conditions
V_SM
V_RM
I_RM
dV/dt_crit
f = 5 Hz, t_p = 10ms
f = 50 Hz, t_p = 10ms
V_RM, T_j = 110°C
Exp. to 0.67 x V_DRM, T_j = 110°C
5STB 18U6500 5STB 18U6200 5STB 18U5800
6500 V
5600 V
6200 V
5300 V
5800 V
4900 V
≤ 600 mA
2000 V/µs
Mechanical data
Parameter
Symbol Conditions
Mounting force
F_M
Acceleration
a
Acceleration
a
Weight
m
Surface creepage distance D_S
Air strike distance
D_a
Device unclamped
Device clamped
min typ. max Unit
120 135 160
kN
50
m/s²
100
m/s²
3.6
kg
53
mm
22
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.