5STB17N5200 Datasheet, PDF (1/6 Pages) The ABB Group – Bi-Directional Control Thyristor

V_SM = 5200 V _{Bi-Directional Control Thyristor}
I_TAVM = 1800 A
I_TRMS = 2830 A
I_TSM = 29000 A
5STB 17N5200
V_T0 = 1.02 V
r_T
= 0.320 mΩ
Doc. No. 5SYA1036-03 Sep. 01
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 17N5200 5STB 17N5000 5STB 17N4600 Conditions
V_SM
5200 V
V_RM
4400 V
I_SM
I_RM
dV/dt_crit
VRM is equal to VSM up to Tj = 110°C
5000 V
4200 V
≤ 400 mA
≤ 400 mA
2000 V/µs
4600 V
f = 5 Hz, t_p = 10ms
4000 V
f = 50 Hz,t_p = 10ms
V_SM
V_RM
T_j = 125°C
@ Exp. to 0.67xV_SM
Mechanical data
F_M Mounting force
nom.
min.
a _Acceleration
Device unclamped
Device clamped
max.
m Weight
D_S Surface creepage distance
D_a Air strike distance
90 kN
81 kN
108 kN
50 m/s²
100 m/s²
2.9 kg
53 mm
22 mm
ABB Semiconductors AG reserves the right to change specifications without notice.