5STB13N6500 Datasheet, PDF (1/7 Pages) The ABB Group – Bi-Directional Control Thyristor

V_SM = 6500 V
I_T(AV)M = 1405 A
I_T(RMS) = 2205 A
I_TSM = 22×10³ A
V_T0 =
1.2 V
r_T
=
0.6 mΩ
Bi-Directional Control Thyristor
5STB 13N6500
Doc. No. 5SYA1035-03 May 06
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for energy management and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values ^{Note 1}
Parameter
Max. surge peak blocking
voltage
Max. repetitive peak
reverse blocking voltage
Symbol Conditions
V_SM ¹⁾ f = 5 Hz, t_p = 10 ms
V_RM ¹⁾ f = 50 Hz, t_p = 10 ms
min typ
max Unit
6500 V
5600 V
Critical rate of rise of
commutating voltage
dv/dt_crit Exp. to 3750 V, T_vj = 125°C
Characteristic values
Parameter
Symbol Conditions
min typ
Max. leakage current
I_RM
V_RM, T_vj = 125 °C
1) VRM is equal to VSM up to Tvj = 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C
2000 V/µs
max Unit
400 mA
Mechanical data
Maximum rated values ^{Note 1}
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Symbol Conditions
F_M
a
Device unclamped
a
Device clamped
Symbol Conditions
m
min
81
typ
90
max
108
50
100
Unit
kN
m/s²
m/s²
min
typ max Unit
2.9
kg
Housing thickness
H
Surface creepage distance D_S
Air strike distance
D_a
F_M = 90 kN, T_a = 25 °C
35
35.6 mm
53
mm
22
mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.