5SNS0300U1201 Datasheet, PDF (1/9 Pages) The ABB Group – IGBT Module LoPak5 SPT

V_CE =
I_C =
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· Low profile compact baseless
package for high power cycling
capability
· Snap-on PCB assembly
· Integrated PTC substrate
temperature sensor
Doc. No. 5SYA1528-02 July 03
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Case operating temperature
Storage temperature
Mounting torques
V_CES
I_C
I_CM
V_GES
P_tot
I_F
I_FM
I_FSM
t_psc
V_isol
T_vj
T_c(op)
T_stg
M₁
M₂
V_GE = 0 V, T_vj ³ 25 °C
T_h = 60 °C
t_p = 1 ms, T_h = 60 °C
T_h = 25 °C, per switch (IGBT)
V_R = 0 V, T_vj = 125 °C,
t_p = 10 ms, half-sinewave
V_CC = 900 V, V_CEMCHIP £ 1200 V
V_GE £ 15 V, T_vj £ 125 °C
1 min, f = 50 Hz
Base-heatsink, M5 screws
Main terminals, M6 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur
min max Unit
1200
V
300 A
600 A
-20 20 V
960 W
300 A
600 A
3600 A
10 µs
2500 V
150 °C
-40 125 °C
-40 125 °C
23
Nm
45
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.