5SNE0800M1701 Datasheet, PDF (1/9 Pages) The ABB Group – IGBT Module

V_CE =
I_C
=
1700 V
800 A
ABB HiPak^TM
IGBT Module
5SNE 0800M170100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1590-00 Oct 06
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
Collector-emitter voltage
V_CES V_GE = 0 V, T_vj ≥ 25 °C
DC collector current
I_C
T_c = 80 °C
Peak collector current
I_CM
t_p = 1 ms, T_c = 80 °C
Gate-emitter voltage
V_GES
-20
Total power dissipation
P_tot T_c = 25 °C, per switch (IGBT)
DC forward current
I_F
Peak forward current
Surge current
IGBT short circuit SOA
I_FRM
I_FSM
V_R = 0 V, T_vj = 125 °C,
t_p = 10 ms, half-sinewave
t_psc
V_CC = 1200 V, V_CEMCHIP ≤ 1700 V
V_GE ≤ 15 V, T_vj ≤ 125 °C
Isolation voltage
V_isol 1 min, f = 50 Hz
Junction temperature
T_vj
Junction operating temperature T_vj(op)
-40
Case temperature
T_c
-40
Storage temperature
T_stg
-40
M_s Base-heatsink, M6 screws
4
Mounting torques ²⁾
M_t1 Main terminals, M8 screws
8
M_t2 Auxiliary terminals, M4 screws
2
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747}
2) _{For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max
1700
800
1600
20
4800
800
1600
6600
10
4000
150
125
125
125
6
10
3
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm