5SNA1200E3301 Datasheet, PDF (1/9 Pages) The ABB Group – IGBT Module

V_CE =
I_C
=
3300 V
1200 A
ABB HiPak^TM
IGBT Module
5SNA 1200E330100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1556-03 May 05
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
V_CES V_GE = 0 V
DC collector current
I_C
T_c = 80 °C
Peak collector current
I_CM
t_p = 1 ms, T_c = 80 °C
Gate-emitter voltage
V_GES
-20
Total power dissipation
P_tot T_c = 25 °C, per switch (IGBT)
DC forward current
I_F
Peak forward current
Surge current
IGBT short circuit SOA
I_FRM
I_FSM
V_R = 0 V, T_vj = 125 °C,
t_p = 10 ms, half-sinewave
t_psc
V_CC = 2500 V, V_CEMCHIP ≤ 3300 V
V_GE ≤ 15 V, T_vj ≤ 125 °C
Isolation voltage
V_isol 1 min, f = 50 Hz
Junction temperature
T_vj
Junction operating temperature T_vj(op)
-40
Case temperature
T_c
-40
Storage temperature
T_stg
-40
M_s Base-heatsink, M6 screws
4
Mounting torques ²⁾
M_t1 Main terminals, M8 screws
8
M_t2 Auxiliary terminals, M4 screws
2
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747}
2) _{For detailed mounting instructions refer to ABB Document No. 5SYA2039}
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
3300 V
1200 A
2400 A
20 V
11750 W
1200 A
2400 A
12000 A
10 µs
6000 V
150 °C
125 °C
125 °C
125 °C
6
10 Nm
3