5SNA1200E2501 Datasheet, PDF (1/9 Pages) The ABB Group – IGBT Module

V_CE =
I_C
=
2500 V
1200 A
ABB HiPak^TM
IGBT Module
5SNA 1200E250100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1557-02 July 04
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques ²⁾
V_CES
I_C
I_CM
V_GES
P_tot
I_F
I_FRM
I_FSM
t_psc
V_isol
T_vj
T_vj(op)
T_c
T_stg
M₁
M₂
M₃
V_GE = 0 V
T_c = 80 °C
t_p = 1 ms, T_c = 80 °C
T_c = 25 °C, per switch (IGBT)
V_R = 0 V, T_vj = 125 °C,
t_p = 10 ms, half-sinewave
V_CC = 1900 V, V_CEMCHIP ≤ 2500 V
V_GE ≤ 15 V, T_vj ≤ 125 °C
1 min, f = 50 Hz
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747}
2) _{For detailed mounting instructions refer to ABB Document No. 5SYA2039}
min max Unit
2500 V
1200 A
2400 A
-20 20 V
11000 W
1200 A
2400 A
11000 A
10 µs
5000 V
150 °C
-40 125 °C
-40 125 °C
-40 125 °C
46
8 10 Nm
23
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.