5SMY12H1200 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die

V_CE =
I_C
=
1200 V
57 A
IGBT-Die
5SMY 12H1200
Die size: 9.1 x 9.1 mm
• Ultra low loss thin IGBT die
• Highly rugged SPT⁺ design
• Large bondable emitter area
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Collector-emitter voltage
V_CES V_GE = 0 V, T_vj ≥ 25 °C
DC collector current
I_C
Peak collector current
I_CM
Limited by T_vjmax
Gate-emitter voltage
V_GES
IGBT short circuit SOA
t_psc
V_CC = 900 V, V_CEM ≤ 1200 V
V_GE ≤ 15 V, T_vj ≤ 125 °C
Junction temperature
T_vj
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9}
Doc. No. 5SYA1638-01 Sep 06
min max Unit
1200 V
57 A
114 A
-20 20 V
10 µs
-40 150 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.