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5SMX12N4507 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die | |||
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VCE =
IC
=
4500 V
40 A
IGBT-Die
5SMX 12N4507
Die size: 14.3 x 14.3 mm
⢠Low loss, rugged SPT technology
⢠Smooth switching for good EMC
⢠Emitter metallisation optimized for press-pack packaging
⢠Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM
Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 3400 V, VCEM ⤠4500 V
VGE ⤠15 V, Tvj ⤠125 °C
Junction temperature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1626-03 July 06
min max Unit
4500 V
40 A
80 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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