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5SMX12M6500 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die | |||
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VCE =
IC
=
6500 V
25 A
IGBT-Die
5SMX 12M6500
PRELIMINARY
Die size: 13.6 x 13.6 mm
⢠Low loss, rugged SPT technology
⢠Smooth switching for good EMC
⢠Large bondable emitter area
⢠Passivation: SIPOS and Silicon Nitride plus Polyimide
Doc. No. 5SYA1627-01 Sep 05
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V, Tvj ⥠25 °C
DC collector current
IC
Peak collector current
ICM
Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 4400 V, VCEM ⤠6500 V
VGE ⤠15 V, Tvj ⤠125 °C
Junction temperature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
min max Unit
6500 V
25 A
50 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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