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5SMX12M1273 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die | |||
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VCE =
IC
=
1200 V
150 A
IGBT-Die
5SMX 12M1273
Die size: 13.6 x 13.6 mm
⢠Low loss thin IGBT die
⢠Highly rugged SPT design
⢠Large bondable emitter area
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V, Tvj ⥠25 °C
DC collector current
IC
Peak collector current
ICM
Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 900 V, VCEM ⤠1200 V
VGE ⤠15 V, Tvj ⤠125 °C
Junction temperature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1637-00 July 06
min max Unit
1200 V
150 A
300 A
-20 20 V
10 µs
-40 150 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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