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5SMX12L2510 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die | |||
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VCE =
IC
=
2500 V
50 A
IGBT-Die
5SMX 12L2510
Die size: 12.4 x 12.4 mm
⢠Low loss, rugged SPT technology
⢠Smooth switching for good EMC
⢠Large bondable emitter area
⢠Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM
Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 2000 V, VCEM ⤠2500 V
VGE ⤠15 V, Tvj ⤠125 °C
Junction temperature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA 1622-03 Sep 05
min max Unit
2500 V
50 A
100 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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