5SMX12K1273 Datasheet, PDF (1/5 Pages) The ABB Group – IGBT-Die

V_CE =
I_C
=
1200 V
75 A
IGBT-Die
5SMX 12K1273
Die size: 11.0 x 11.0 mm
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Minimized gate charge, short delay times
• Optimized for paralleling
• Large bondable emitter area
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Collector-emitter voltage
V_CES V_GE = 0 V, T_vj ≥ 25 °C
DC collector current
I_C
Peak collector current
I_CM
Limited by T_vjmax
Gate-emitter voltage
V_GES
IGBT short circuit SOA
t_psc
V_CC = 900 V, V_CEM ≤ 1200 V
V_GE ≤ 15 V, T_vj ≤ 125 °C
Junction temperature
T_vj
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9}
Doc. No. 5SYA 1633-00 June 05
min max Unit
1200 V
75 A
150 A
-20 20 V
10 µs
-40 150 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.