5SLX12M6500 Datasheet, PDF (1/3 Pages) The ABB Group – Fast-Diode Die

V_RRM =
I_F =
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
Die size: 13.6 x 13.6 mm
• Fast and soft reverse recovery
• Low losses
• Large SOA
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Doc. No. 5SYA1666-01 July 07
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetitive peak reverse voltage
V_RRM T_vj ≥ 25 °C
Continuous forward current
I_F
Repetitive peak forward current
I_FRM
Limited by T_vjmax
Junction temperature
T_vj
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2}
min max Unit
6500 V
50 A
100 A
-40 125 °C
Diode characteristic values ²⁾
Parameter
Symbol Conditions
Continuous forward voltage
V_F
I_F = 50 A
Continuous reverse current
I_R
V_R = 6500 V
Peak reverse recovery current
I_rr
Recovered charge
Q_rr
Reverse recovery time
t_rr
Reverse recovery energy
2) _{Characteristic values according to IEC 60747 - 2}
E_rec
I_F = 50 A,
V_R = 3600 V,
di/dt = 230 A/µs,
L_σ = 3400 nH,
Inductive load,
Switch:
2x 5SMX12M6500
min typ max Unit
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
T_vj = 25 °C
T_vj = 125 °C
3.2
V
3.4
V
20
µA
3
6 mA
70
A
80
A
65
µC
100
µC
1700
ns
2250
ns
100
mJ
180
mJ
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.