5SLX12L2510 Datasheet, PDF (1/3 Pages) The ABB Group – Fast-Diode Die

V_RRM =
I_F =
2500 V
100 A
Fast-Diode Die
5SLX 12L2510
Die size: 12.4 x 12.4 mm
• Fast and soft reverse-recovery
• Low losses
• High SOA
• Passivation: SIPOS Nitride plus Polyimide
Doc. No. 5SYA1664-02 Feb. 05
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Repetitive peak reverse voltage
V_RRM
Continuous forward current
I_F
Repetitive peak forward current
I_FRM
Limited by T_vjmax
Junction temperature
T_vj
1) _{Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2}
min max Unit
2500 V
100 A
200 A
-40 125 °C
Diode characteristic values ²⁾
Parameter
Symbol Conditions
Continuous forward voltage
V_F
I_F = 100 A
Continuous reverse current
I_R
V_R = 2500 V
Peak reverse recovery current
I_rr
Recovered charge
Q_rr
Reverse recovery time
t_rr
Reverse recovery energy
2) _{Characteristic values according to IEC 60747 - 2}
E_rec
I_F = 100 A,
V_R = 1250 V,
di/dt = 440 A/µs,
L_σ = 1200 nH,
Inductive load,
Switch:
2x 5SMX12L2510
min typ max Unit
T_vj = 25 °C 1.4 1.75 2.0 V
T_vj = 125 °C
1.8
V
T_vj = 25 °C
1.5
µA
T_vj = 125 °C
2.5 7 mA
T_vj = 25 °C
92
A
T_vj = 125 °C
115
A
T_vj = 25 °C
57
µC
T_vj = 125 °C
98
µC
T_vj = 25 °C
900
ns
T_vj = 125 °C
1150
ns
T_vj = 25 °C
54
mJ
T_vj = 125 °C
92
mJ
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.