5SHZ08F6000 Datasheet, PDF (1/8 Pages) The ABB Group – Reverse Blocking Integrated Gate-Commutated Thyristor

V_DRM
V_RRM
I_TGQM
V_T0
r_T
= 6000 V
= 6000 V
= 800 A
= 3.25 V
= 6.4 _mΩ
Reverse Blocking Integrated
Gate-Commutated Thyristor
5SHZ 08F6000
• Optimized for current source inverter (CSI)
• Fast response (t_don < 3 µs, t_doff < 7 µs)
• Precise timing (∆t_doff < 400 ns)
• Direct fiber optic control
• Status feedback
• Cosmic radiation withstand rating
• Very high EMI immunity
Doc. No. 5SYA1231-01 Sep. 01
Blocking
V_DRM
V_RRM
I_DRM
I_RRM
V_AC
Repetitive peak off-state voltage
Reverse repetitive peak off-state
voltage
Repetitive peak off-state current
Reverse repetitive peak off-state
current
Max. AC voltage for 100
FIT failure rate
Mechanical data (see Fig. 8)
F_m
Mounting force
D_p
Pole-piece diameter
H
Housing thickness
m
Weight IGCT
D_S
Surface creepage distance
D_a
Air strike distance
l
Length IGCT
h
Height IGCT
w
Width IGCT
min.
max.
6000 V
6000 V
≤ 50 mA
≤ 50 mA
3600 V
12 kN
16 kN
47 mm
26 mm
1.00 kg
≥ 33 mm
≥ 13 mm
250 mm
44 mm
208 mm
V_D = V_DRM
V_R = V_RRM
0 ≤ T_jop ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
±0.1 mm
±0.5 mm
+0/-0.5 mm
±1.0 mm
+0/-0.5 mm
ABB Semiconductors AG reserves the right to change specifications without notice.