5SHY55L4500 Datasheet, PDF (1/9 Pages) The ABB Group – Asymmetric Integrated Gate- Commutated Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_(T0) =
r_T
=
V_DC-link =
4500 V
5500 A
33×10³ A
1.3 V
0.26 mΩ
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 55L4500
PRELIMINARY
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz)
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Doc. No. 5SYA1243-01 Aug 07
Blocking
Maximum rated values ¹⁾
Parameter
Rep. peak off-state voltage
Symbol
V_DRM
Conditions
Gate Unit energized, Note 1
min
typ
Permanent DC voltage for V_DC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
Characteristic values
Parameter
V_RRM
Symbol Conditions
min
typ
Rep. peak off-state current I_DRM
V_D = V_DRM, Gate Unit energized
Mechanical data (see Fig. 11, 12)
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Mounting force
Characteristic values
Parameter
F_m
Symbol Conditions
36
40
min
typ
Pole-piece diameter
D_p
± 0.1 mm
85
Housing thickness
H
25.3
Weight
m
Surface creepage distance D_s
Anode to Gate
33
Air strike distance
D_a
Anode to Gate
10
Length
l
± 1.0 mm
439
Height
h
± 1.0 mm
40
Width IGCT
w
± 1.0 mm
173
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
4500 V
2800 V
17
V
max Unit
50 mA
max Unit
44
kN
max Unit
mm
25.8 mm
2.9
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.