5SHY35L4510 Datasheet, PDF (1/9 Pages) The ABB Group – Asymmetric Integrated Gate- Commutated Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_(T0) =
r_T
=
V_DC-link =
4500 V
4000 A
32×10³ A
1.4 V
0.325 mΩ
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
wide temperature range
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Contact factory for series connection
Doc. No. 5SYA1232-02 June 07
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Rep. peak off-state voltage V_DRM Gate Unit energized
Permanent DC voltage for V_DC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
V_RRM
IGCT in
off-state
on-state
Characteristic values
Parameter
Symbol Conditions
min
typ
Rep. peak off-state current I_DRM
V_D = V_DRM, Gate Unit energized
Mechanical data (see Fig. 11, 12)
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
F_m
Symbol Conditions
Pole-piece diameter
D_p
± 0.1 mm
Housing thickness
H
min
typ
36
40
min
typ
85
25.3
Weight
m
Surface creepage distance D_s
Air strike distance
D_a
Length
l
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
439
Height
h
± 1.0 mm
40
Width IGCT
w
± 1.0 mm
173
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
4500 V
2800 V
17
V
10
V
max Unit
50 mA
max Unit
44
kN
max Unit
mm
25.8 mm
2.9
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.