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5SHX14H4510 Datasheet, PDF (1/13 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor | |||
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VDRM =
ITGQM =
ITSM =
V(T0) =
rT
=
VDC-link =
4500 V Reverse Conducting Integrated
1100 A
8.8Ã103 A
Gate-Commutated Thyristor
1.65 V
5SHX 14H4510
1.2 mâ¦
2800 V
PRELIMINARY
⢠High snubberless turn-off rating
⢠Optimized for medium frequency (<1 kHz) and
low turn-off losses
⢠High reliability
⢠High electromagnetic immunity
⢠Simple control interface with status feedback
⢠AC or DC supply voltage
⢠Suitable for series connection (contact factory)
Doc. No. 5SYA1227-05 Aug 07
Blocking
Maximum rated values Note 1
Parameter
Repetitive peak off-state
voltage
Symbol Conditions
VDRM Gate Unit energized
min
typ
Permanent DC voltage for VDC-link
100 FIT failure rate of
RC-GCT
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state IDRM
current
VD = VDRM, Gate Unit energized
Mechanical data (see Fig. 20, 21)
Maximum rated values Note 1
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Pole-piece diameter
Housing thickness
Fm
Symbol Conditions
Dp
± 0.1 mm
H
Weight
m
Surface creepage distance Ds
Air strike distance
Da
Length
l
Anode to Gate
Anode to Gate
± 1.0 mm
Height
h
± 1.0 mm
Width IGCT
w
± 1.0 mm
min
typ
18
20
min
typ
63
25.9
33
13
296
48
208
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max Unit
4500 V
2800 V
max Unit
20 mA
max Unit
22
kN
max Unit
mm
26.4 mm
1.7
kg
mm
mm
mm
mm
mm
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