5SHX08F4510 Datasheet, PDF (1/13 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_(T0) =
r_T
=
V_DC-link =
4500 V _{Reverse Conducting Integrated}
630 A
5×10³ A
Gate-Commutated Thyristor
1.8 V
5SHX 08F4510
2 mΩ
2800 V
PRELIMINARY
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
low turn-off losses
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Suitable for series connection (contact factory)
Doc. No. 5SYA1223-06 Aug 07
Blocking
Maximum rated values ^{Note 1}
Parameter
Repetitive peak off-state
voltage
Symbol Conditions
V_DRM Gate Unit energized
min
typ
Permanent DC voltage for V_DC-link
100 FIT failure rate of
RC-GCT
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state I_DRM
current
V_D = V_DRM, Gate Unit energized
Mechanical data (see Fig. 20, 21)
Maximum rated values ^{Note 1}
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Pole-piece diameter
Housing thickness
F_m
Symbol Conditions
D_p
± 0.1 mm
H
Weight
m
Surface creepage distance D_s
Air strike distance
D_a
Length
l
Anode to Gate
Anode to Gate
± 1.0 mm
Height
h
± 1.0 mm
Width IGCT
w
± 1.0 mm
min
typ
14
16
min
typ
47
25.9
33
13
296
47
208
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
max Unit
4500 V
2800 V
max Unit
20 mA
max Unit
18
kN
max Unit
mm
26.4 mm
1.01 kg
mm
mm
mm
mm
mm