5SHX04D4502 Datasheet, PDF (1/9 Pages) The ABB Group – Reverse Conducting Integrated Gate-Commutated Thyristor

V_DRM
=
I_TGQM
=
I_TSM
=
V_T0
=
r_T
=
V_DClink =
4500 V
340 A
2.1 kA
1.8 V
4.7 _mΩ
2800 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 04D4502
• Direct fiber optic control
• Fast response (t_don < 3 µs, t_doff < 6 µs)
• Precise timing (∆t_doff < 800 ns)
• Patented free floating silicon technology
• Optimized low on-state and switching losses
• Very high EMI immunity
• Cosmic radiation withstand rating
Doc. No. 5SYA1224-03 Jan. 02
Blocking
V_DRM Repetitive peak off-state voltage
I_DRM
Repetitive peak off-state current
≤
V_DClink
Permanent DC voltage for 100
FIT failure rate
4500 V
20 mA
2800 V
V_GR ≥ 2V
V_D = V_DRM
V_GR ≥ 2V
0 ≤ T_j ≤ 115 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 9)
F_m
Mounting force
D_p
Pole-piece diameter
H
Housing thickness
m
Weight IGCT
D_s
Surface creepage distance
D_a
Air strike distance
l
Length IGCT
h
Height IGCT
w
Width IGCT
min.
max.
≥
≥
10 kN
14 kN
34 mm
26 mm
0.55 kg
33 mm
13 mm
202.5 mm
46.5 mm
200 mm
±0.1 mm
±0.5 mm
+0/-0.5 mm
±1.0 mm
+0/-0.5 mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.