5SGA40L4501 Datasheet, PDF (1/9 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0
=
r_T
=
V_Dclink =
4500 V
4000 A
25×10³ A
2.1 V
0.58 mΩ
2800 V
Asymmetric Gate turn-off
Thyristor
5SGA 40L4501
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Doc. No. 5SYA1208-02 March 05
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state
voltage
V_DRM
V_GR ≥ 2 V
Repetitive peak reverse
voltage
V_RRM
Permanent DC voltage for V_DC-link Ambient cosmic radiation at sea level
100 FIT failure rate
in open air.
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state I_DRM
current
V_D = V_DRM, V_GR ≥ 2 V
Repetitive peak reverse
I_RRM
V_R = V_RRM, R_GK = ∞ Ω
current
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Mounting force
Characteristic values
Parameter
F_m
Symbol Conditions
36
40
min
typ
Pole-piece diameter
D_p
± 0.1 mm
85
Housing thickness
H
25.6
Weight
m
Surface creepage distance D_s
Anode to Gate
33
Air strike distance
D_a
Anode to Gate
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
4500 V
17
V
2800 V
max Unit
100 mA
50
mA
max Unit
44
kN
max Unit
mm
26.1 mm
1.5
kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.