5SGA30J4502 Datasheet, PDF (1/9 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM
=
V_T0
=
r_T
=
V_Dclink =
4500 V
3000 A
24×10³ A
2.2 V
0.6 mΩ
2800 V
Asymmetric Gate turn-off
Thyristor
5SGA 30J4502
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Doc. No. 5SYA1202-03 Jan. 03
Blocking
Maximum rated values ¹⁾
Parameter
Repetitive peak off-state
voltage
Symbol Conditions
V_DRM
V_GR ≥ 2 V
min
typ
Repetitive peak reverse
voltage
V_RRM
Permanent DC voltage for V_Dclink
100 FIT failure rate
Ambient cosmic radiation at sea level
in open air.
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state I_DRM
current
V_D = V_DRM, V_GR ≥ 2 V
Repetitive peak reverse
I_RRM
current
V_R = V_RRM, R_GK = ∞ Ω
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Characteristic values
Parameter
Pole-piece diameter
Housing thickness
Symbol Conditions
F_m
Symbol Conditions
D_p
± 0.1 mm
H
± 0.5 mm
min
typ
36
40
min
typ
75
26
Weight
m
1.3
Surface creepage distance D_s
Anode to Gate
33
Air strike distance
D_a
Anode to Gate
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
4500
V
17
V
2800 V
max Unit
60
mA
20
mA
max Unit
44
kN
max Unit
mm
mm
kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.