5SGA25H2501 Datasheet, PDF (1/9 Pages) The ABB Group – Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0 =
r_T =
V_DClin =
2500 V
2500 A
16 kA
1.66 V
0.57 _mΩ
1400 V
Gate turn-off Thyristor
5SGA 25H2501
Doc. No. 5SYA1206-01 Dec. 04
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
V_DRM Repetitive peak off-state voltage
2500 V
V_RRM Repetitive peak reverse voltage
17 V
I_DRM Repetitive peak off-state current ≤ 30 mA
I_RRM Repetitive peak reverse current ≤ 50 mA
V_DClink Permanent DC voltage for 100
1400 V
FIT failure rate
V_GR ≥ 2V
V_D = V_DRM
V_GR ≥ 2V
V_R = V_RRM
R_GK = ∞
-40 ≤ T_j ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
F_m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
min.
max.
M
Weight
DS
Surface creepage distance
≥
D_a
Air strike distance
≥
17 kN
24 kN
50 m/s²
200 m/s²
0.8 kg
22 mm
13 mm
ABB Semiconductors AG reserves the right to change specifications without notice.