5SGA20H4502 Datasheet, PDF (1/9 Pages) The ABB Group – Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0 =
r_T =
V_DClin =
4500 V
2000 A
13 kA
1.80 V
0.85 _mΩ
2200 V
Gate turn-off Thyristor
5SGA 20H4502
Doc. No. 5SYA 1210-01 Aug. 2000
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
V_DRM Repetitive peak off-state voltage
V_RRM Repetitive peak reverse voltage
I_DRM Repetitive peak off-state current ≤
I_RRM Repetitive peak reverse current ≤
V_DClink Permanent DC voltage for 100
FIT failure rate
4500 V
17 V
V_GR ≥ 2V
100 mA V_D = V_DRM
V_GR ≥ 2V
50 mA V_R = V_RRM
R_GK = ∞
2200 V -40 ≤ T_j ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
F_m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
min.
max.
17 kN
24 kN
50 m/s²
200 m/s²
M
Weight
D_S
Surface creepage distance
D_a
Air strike distance
0.8 kg
≥ 22 mm
≥ 13 mm
ABB Semiconductors AG reserves the right to change specifications without notice.