5SGA20H2501 Datasheet, PDF (1/9 Pages) The ABB Group – Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0 =
r_T =
V_DClin =
2500 V
2000 A
16 kA
1.66 V
0.57 _mW
1400 V
Gate turn-off Thyristor
5SGA 20H2501
Doc. No. 5SYA1205-01 Jun. 04
· Patented free-floating silicon technology
· Low on-state and switching losses
· Annular gate electrode
· Industry standard housing
· Cosmic radiation withstand rating
Blocking
V_DRM Repetitive peak off-state voltage
2500 V
V_RRM Repetitive peak reverse voltage
17 V
I_DRM Repetitive peak off-state current £ 30 mA
I_RRM Repetitive peak reverse current £ 50 mA
V_DClink Permanent DC voltage for 100
1400 V
FIT failure rate
V_GR ³ 2V
V_D = V_DRM
V_GR ³ 2V
V_R = V_RRM
R_GK = ¥
-40 £ T_j £ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
F_m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
min.
max.
M
Weight
D_S
Surface creepage distance
³
D_a
Air strike distance
³
17 kN
24 kN
50 m/s²
200 m/s²
0.8 kg
22 mm
13 mm
ABB Semiconductors AG reserves the right to change specifications without notice.