5SGA06D4502 Datasheet, PDF (1/5 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0
=
r_T
=
V_Dclink =
4500 V
600 A
3×10³ A
1.9 V
3.5 mW
2800 V
Asymmetric Gate turn-off
Thyristor
5SGA 06D4502
PRELIMINARY
· Patented free-floating silicon technology
· Low on-state and switching losses
· Central gate electrode
· Industry standard housing
· Cosmic radiation withstand rating
Doc. No. 5SYA1236-00 Jun. 04
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state
voltage
V_DRM
V_GR ³ 2 V
Repetitive peak reverse
voltage
V_RRM
Permanent DC voltage for V_Dclink
100 FIT failure rate
Ambient cosmic radiation at sea level
in open air.
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state I_DRM
current
V_D = V_DRM, V_GR ³ 2 V
Repetitive peak reverse
I_RRM
V_R = V_RRM, R_GK = ¥ W
current
Mechanical data
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Mounting force
Characteristic values
Parameter
F_m
Symbol Conditions
10
11
min
typ
Pole-piece diameter
D_p
± 0.1 mm
34
Housing thickness
H
26
Weight
m
Surface creepage distance D_s
Anode to Gate
30
Air strike distance
D_a
Anode to Gate
20.5
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
4500 V
17
V
2800 V
max Unit
20
mA
50
mA
max Unit
12
kN
max Unit
mm
mm
0.25 kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.