5SDF13H4501 Datasheet, PDF (1/7 Pages) The ABB Group – Fast Recovery Diode

V_RRM =
I_F(AV)M =
I_FSM
=
V_(T0) =
r_T
=
V_DC-link =
4500 V
1200 A
25×10³ A
1.3 V
0.48 mΩ
2800 V
Fast Recovery Diode
5SDF 13H4501
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO
converters with high DC link voltages
• Industry standard housing
• Cosmic radiation withstand rating
Doc. No. 5SYA1104-02 Oct. 06
Blocking
Maximum rated values ¹⁾
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Parameter
Repetitive peak reverse current
Symbol Conditions
V_RRM
f = 50 Hz, t_p = 10ms, T_vj = 125°C
V_DC-link Ambient cosmic radiation at sea level in open
air. (100% Duty)
Symbol Conditions
min typ
I_RRM
V_R = V_RRM, T_vj = 125°C
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Acceleration
Symbol Conditions
F_m
a
Device unclamped
min typ
36
40
Acceleration
Characteristic values
Parameter
Weight
a
Device clamped
Symbol Conditions
m
min typ
Housing thickness
H
26.0
Surface creepage distance
D_S
30
Air strike distance
D_a
20
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
Value
4500
2800
max
50
max
44
50
200
max
0.83
26.4
Unit
V
V
Unit
mA
Unit
kN
m/s²
m/s²
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.