 English |
|
|
|
|
|
|
|
| 5SDF10H4502 Datasheet, PDF (1/6 Pages) The ABB Group – Fast Recovery Diode | |||
| |||
|
VRRM =
IF(AV)M =
IFSM =
V(T0) =
rT
=
VDClink =
4500 V
810 A
24Ã103 A
2.42 V
1.1 mâ¦
2800 V
Fast Recovery Diode
5SDF 10H4502
PRELIMINARY
⢠Patented free-floating technology
⢠Industry standard housing
⢠Cosmic radiation withstand rating
⢠Low on-state and switching losses
⢠Optimized for snubberless operation
Doc. No. 5SYA1115-03 Oct. 06
Blocking
Maximum rated values 1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Parameter
Repetitive peak reverse current
Symbol Conditions
VRRM
f = 50 Hz, tp = 10ms, Tvj = 115°C
VDC-link Ambient cosmic radiation at sea level in open
air. (100% Duty)
VDC-link Ambient cosmic radiation at sea level in open
air. (5% Duty)
Symbol Conditions
min typ
IRRM
VR = VRRM, Tvj = 115°C
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Symbol Conditions
Fm
a
Device unclamped
min typ
42
40
Acceleration
Characteristic values
Parameter
Weight
a
Device clamped
Symbol Conditions
m
min typ
Housing thickness
H
26.0
Surface creepage distance
DS
30
Air strike distance
Da
20
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
Value
4500
2800
3200
max
30
max
46
50
200
max
0.83
26.4
Unit
V
V
V
Unit
mA
Unit
kN
m/s2
m/s2
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese