5SDF07F4501 Datasheet, PDF (1/6 Pages) The ABB Group – Fast Recovery Diode

V_RRM =
I_FAVM =
I_FSM =
V_F0
=
r_F
=
V_DClink =
4500 V
650 A
16 kA
1.4 V
1 _mΩ
2800 V
Fast Recovery Diode
5SDF 07F4501
Doc. No. 5SYA1107-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO converters with high DC link
voltages
• Standard press-pack housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
V_RRM
I_RRM
V_DClink
Repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage for 100 FIT
failure rate
V_DClink Permanent DC voltage for 100 FIT
failure rate
4500 V
≤ 50 mA
2800 V
V
Half sine wave, t_P = 10 ms, f = 50 Hz
V_R = V_RRM, T_j = 125°C
100% Duty
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 12)
F_m
Mounting force
a
Acceleration:
Device unclamped
Device clamped
m
Weight
D_S
Surface creepage distance
D_a
Air strike distance
min.
max.
≥
≥
20 kN
24 kN
50 m/s²
200 m/s²
0.46 kg
33 mm
20 mm
ABB Semiconductors AG reserves the right to change specifications without notice.